IRF7316QPBF mosfet equivalent, power mosfet.
of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make t.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in .
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 212.74KB)